BFU725F-N1 NXP Semiconductors, BFU725F-N1 Datasheet - Page 2

• Manufacturer Part Number: BFU725F-N1
• Description: Npn Wideband Silicon Germanium Rf Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
BFU725F_N1_1
Product data sheet
Table 1.
[1]
[2]
Table 2.
Table 3.
Table 4.
Symbol Parameter
C
f
G
NF
Pin
1
2
3
4
Type number
BFU725F/N1
Type number
BFU725F/N1
T
CBS
p(max)
T
G
sp
p(max)
is the temperature at the solder point of the emitter lead.
collector-base
capacitance
transition frequency
maximum power gain
noise figure
is the maximum power gain, if K > 1. If K < 1 then G
Quick reference data
Discrete pinning
Ordering information
Marking
Description
emitter
base
emitter
collector
Package
Name
-
Rev. 01 — 13 July 2009
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Marking
B7*
…continued
Conditions
V
I
f = 2 GHz; T
I
f = 5.8 GHz; T
I
f = 5.8 GHz;
T
C
C
C
amb
CB
= 25 mA; V
= 25 mA; V
= 5 mA; V
= 2 V; f = 1 MHz
NPN wideband silicon germanium RF transistor
= 25 C
amb
CE
CE
CE
amb
S
= 2 V;
=
= 25 C
= 2 V;
= 2 V;
Simplified outline
= 25 C
opt
p(max)
;
3
2
= Maximum Stable Gain (MSG).
[2]
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China
1
4
BFU725F/N1
Min
-
-
-
-
Typ
70
55
18
0.7
Graphic symbol
© NXP B.V. 2009. All rights reserved.
2
Max
-
-
-
-
mbb159
Version
SOT343F
1, 3
4
fF
Unit
GHz
dB
dB
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