BFU725F-N1 NXP Semiconductors, BFU725F-N1 Datasheet - Page 5

• Manufacturer Part Number: BFU725F-N1
• Description: Npn Wideband Silicon Germanium Rf Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 7.
T
[1]
BFU725F_N1_1
Product data sheet
Symbol Parameter
P
IP3
j
Fig 2.
L(1dB)
= 25 C unless otherwise specified.
G
(mA)
(10) I
(11) I
p(max)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
C
30
20
10
0
0
T
Collector current as a function of
collector-emitter voltage; typical values
output power at 1 dB gain
compression
third-order intercept point
B
B
B
B
B
B
B
B
B
B
B
is the maximum power gain, if K
amb
Characteristics
= 110 A
= 100 A
= 90 A
= 80 A
= 70 A
= 60 A
= 50 A
= 40 A
= 30 A
= 20 A
= 10 A
= 25 C.
0.5
1.0
1.5
…continued
2.0
2.5
1. If K
Conditions
I
I
f
V
C
C
2
CE
001aak271
3.0
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
= f
f
f
f
f
= 25 mA; V
= 25 mA; V
1
1
1
1
(10)
(11)
(V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
= 1.5 GHz
= 1.8 GHz
= 2.4 GHz
= 5.8 GHz
1
+ 1 MHz
1 then G
3.5
Rev. 01 — 13 July 2009
CE
CE
p(max)
= 2 V; Z
= 2 V; Z
= MSG.
Fig 3.
S
S
NPN wideband silicon germanium RF transistor
h
= Z
= Z
(1) V
(2) V
(3) V
FE
400
350
300
250
200
L
L
0
T
DC current gain a function of collector current;
typical values
= 50 ; T
= 50 ; T
amb
CE
CE
CE
= 1 V
= 1.5 V
= 2 V
= 25 C.
amb
amb
10
= 25 C
= 25 C;
(1)
(2)
(3)
BFU725F/N1
20
Min Typ Max Unit
-
-
-
-
-
-
-
-
I
© NXP B.V. 2009. All rights reserved.
C
(mA)
001aak272
8.5
9
8.5
8
17
17
17
19
30
-
-
-
-
-
-
-
-
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