BFU725F-N1 NXP Semiconductors, BFU725F-N1 Datasheet - Page 3

• Manufacturer Part Number: BFU725F-N1
• Description: Npn Wideband Silicon Germanium Rf Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BFU725F_N1_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6.
Symbol
V
V
V
I
P
T
T
Symbol
R
C
Fig 1.
stg
j
CBO
CEO
EBO
tot
th(j-sp)
T
sp
is the temperature at the solder point of the emitter lead.
Power derating curve
Limiting values
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
(mW)
P
tot
200
150
100
Rev. 01 — 13 July 2009
50
0
0
40
Conditions
open emitter
open base
open collector
T
NPN wideband silicon germanium RF transistor
sp
90 C
80
120
T
001aah424
[1]
sp
( C)
Min
-
-
-
-
-
-
65
160
Conditions
BFU725F/N1
Max
10
2.8
0.55
40
136
+150
150
© NXP B.V. 2009. All rights reserved.
Typ
440
Unit
V
V
V
mA
mW
C
C
Unit
K/W
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