ST72324LS4 STMicroelectronics, ST72324LS4 Datasheet - Page 135
ST72324LS4
Manufacturer Part Number
ST72324LS4
Description
8-bit MCU
Manufacturer
STMicroelectronics
Datasheet
1.ST72324LK2.pdf
(154 pages)
Specifications of ST72324LS4
Hdflash Endurance
100 cycles, data retention
Clock Sources
crystal/ceramic resonator oscillators, internal RC oscillator, and bypass for external clock
Four Power Saving Modes
Halt, Active-Halt, Wait and Slow
Main Clock Controller With
Real time base, Beep and Clock-out capabilities
16-bit Timer A With
1 input capture, 1 output compare, external clock input, PWM and pulse generator modes
16-bit Timer B With
2 input captures, 2 output compares, PWM and pulse generator modes
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10-BIT ADC CHARACTERISTICS (Cont’d)
12.12.3 ADC Accuracy
Conditions: V
Notes:
1. ADC Accuracy vs. Negative Injection Current: Injecting negative current may reduce the accuracy of the conversion
being performed on another analog input. The effect of negative injection current on robust pins is specified in
12.12.
Any positive injection current within the limits specified for I
accuracy.
2. Data based on characterization results, monitored in production to guarantee 99.73% within ± max value from -40°C
to 85°C ( ± 3σ distribution limits).
Figure 82. ADC Accuracy Characteristics
Symbol
1023
1022
1021
|E
|E
|E
|E
|E
7
6
5
4
3
2
1
O
G
D
T
L
0
V
|
|
|
|
|
SSA
Digital Result ADCDR
1LSB
Total unadjusted error
Offset error
Gain Error
Differential linearity error
Integral linearity error
1
E
O
IDEAL
DD
2
=3V
Parameter
1)
3
=
1)
V
--------------------------------------------
1)
AREF
4
1024
5
–
1 LSB
1)
V
1)
SSA
E
1)
6
T
IDEAL
E
7
L
CPU in run mode
@ f
CPU in run mode
@ f
(2)
ADC
ADC
E
D
1 MHz.
1 MHz.
Conditions
1021 1022 1023 1024
(3)
INJ(PIN)
(1)
E
G
V
AREF
and ΣI
(1) Example of an actual transfer curve
(2) The ideal transfer curve
(3) End point correlation line
E
between the actual and the ideal transfer curves.
E
transition and the first ideal one.
E
transition and the last actual one.
E
between actual steps and the ideal one.
E
between any actual transition and the end point
correlation line.
INJ(PIN)
T
O
G
D
L
=Total Unadjusted Error: maximum deviation
=Integral Linearity Error: maximum deviation
=Offset Error: deviation between the first actual
=Gain Error: deviation between the last ideal
=Differential Linearity Error: maximum deviation
Flash Devices
Typ
0.5
1.5
1.5
4
3
V
in
(LSB
in
Section 12.8
Max
IDEAL
4.5
4.5
4.5
6
5
2)
)
ROM Devices
Typ
2.6
1.3
1.6
1.7
1
does not affect the ADC
ST72324Lxx
Max
2.6
2.8
3.5
2.5
4
135/154
Section
Unit
LSB
1
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