ST7DALIF2 STMicroelectronics, ST7DALIF2 Datasheet - Page 142

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ST7DALIF2

Manufacturer Part Number
ST7DALIF2
Description
8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST7DALIF2

8 Kbytes Single Voltage Flash Program Memory With Read-out Protection, In-circuit Programming And In-application Programming (icp And Iap). 10k Write/erase Cycles Guaranteed, Data Retention
20 years at 55°C.
256 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention
20 years at 55°C.
Clock Sources
Internal 1% RC oscillator, crystal/ceramic resonator or external clock
Five Power Saving Modes
Halt, Active-Halt, Wait and Slow, Auto Wake Up From Halt
Electrical characteristics
20.7.2
20.7.3
Table 83.
1.
142/171
V
Symbol
ESD(HBM)
Data based on characterization results, not tested in production.
Electrostatic discharge voltage
(Human Body Model)
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Table 82.
1.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). This test
conforms to the AEC-Q100-002 standard.
Absolute maximum ratings
Static latch-up (LU)
2 complementary static tests are required on six parts to assess the latch-up performance.
These tests are compliant with the EIA/JESD 78 IC latch-up standard.
Table 84.
Symbol
Symbol
S
Data based on characterization results, not tested in production.
EMI
LU
A supply overvoltage (applied to each power supply pin)
A current injection (applied to each input, output and configurable I/O pin)
Peak level
Ratings
Parameter
Static latch-up class
EMI data
Electrical sensitivities
(1)
Parameter
V
SO20 package,
conforming to SAE J
1752/3
DD
=5 V, T
T
conforming to AEC-Q100-
002
Conditions
A
=+25°C
A
=+25° C,
Conditions
T
A
=+25° C conforming to JESD 78
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
SAE EMI Level
frequency band
Monitored
Conditions
Class
H1C
MHz
[f
8/4
3.5
31
25
9
OSC2
Max vs.
Maximum
value
4000
/f
CPU
MHz
16/8
ST7DALIF2
(1)
17
36
27
4
II level A
]
Class
dBμV
Unit
Unit
-
V

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