ST7DALIF2 STMicroelectronics, ST7DALIF2 Datasheet - Page 141

• Manufacturer Part Number: ST7DALIF2
• Description: 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI
• Manufacturer: STMicroelectronics

Specifications of ST7DALIF2

• 8 Kbytes Single Voltage Flash Program Memory With Read-out Protection, In-circuit Programming And In-application Programming (icp And Iap). 10k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55°C.
• 256 Bytes Data Eeprom With Read-out Protection. 300k Write/erase Cycles Guaranteed, Data Retention: 20 years at 55°C.
• Clock Sources: Internal 1% RC oscillator, crystal/ceramic resonator or external clock
• Five Power Saving Modes: Halt, Active-Halt, Wait and Slow, Auto Wake Up From Halt

ST7DALIF2
20.7
20.7.1
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
■
■
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations:
The software flowchart must include the management of runaway conditions such as:
●
●
●
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the RESET pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 81.
Symbol
V
V
FESD
ESD: Electrostatic discharge (positive and negative) is applied on all pins of the device
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2 standard.
FTB: A burst of fast transient voltage (positive and negative) is applied to V
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms with
the IEC 1000-4-4 standard.
FFTB
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
Fast transient voltage burst limits to be
applied through 100 pF on V
to induce a functional disturbance
EMS data
Parameter
DD
and V
DD
pins
V
conforms to IEC 1000-4-2
V
conforms to IEC 1000-4-4
DD
DD
=5 V, T
=5 V, T
A
A
Conditions
=+25°C, f
=+25°C, f
Electrical characteristics
OSC2
OSC2
=8 MHz
=8 MHz
DD
and V
141/171
Level/
class
3B
3B
SS