LH28F800SGHE-L70 Sharp Electronics, LH28F800SGHE-L70 Datasheet - Page 35

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LH28F800SGHE-L70

Manufacturer Part Number
LH28F800SGHE-L70
Description
Manufacturer
Sharp Electronics
Datasheet

Specifications of LH28F800SGHE-L70

Cell Type
NOR
Density
8Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
19b
Operating Supply Voltage (typ)
5V
Operating Temp Range
-40C to 85C
Package Type
TSOP-I
Program/erase Volt (typ)
2.7/3.3/5/12V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
4.75V
Operating Supply Voltage (max)
5.25V
Word Size
16b
Number Of Words
512K
Supply Current
65mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LH28F800SGHE-L70
Manufacturer:
UMC
Quantity:
20
6.2.5 AC CHARACTERISTICS FOR WE#-CONTROLLED WRITE OPERATIONS (contd.)
NOTES :
1. Read timing characteristics during block erase, word
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
4. V
SYMBOL
• V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHWL
ELWL
WLWH
PHHWH
VPWH
AVWH
DVWH
WHDX
WHAX
WHEH
WHWL
WHRL
WHGL
QVVL
QVPH
CC
write and lock-bit configuration operations are the same
as during read-only operations. Refer to Section 6.2.4
"AC CHARACTERISTICS" for read-only operations.
word write, or lock-bit configuration.
should be held at V
word write, or lock-bit configuration success (SR.1/3/4/5 = 0).
PP
= 5.0±0.25 V, 5.0±0.5 V, T
should be held at V
Write Cycle Time
RP# High Recovery to WE#
Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
RP# V
V
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low
Write Recovery before Read
V
RY/BY# High
RP# V
RY/BY# High
PP
PP
VERSIONS
Setup to WE# Going High
Hold from Valid SRD,
HH
HH
Setup to WE# Going High
PARAMETER
Hold from Valid SRD,
HH
) until determination of block erase,
PPH1/2/3
IN
and D
A
(and if necessary RP#
= 0 to +70˚C or –40 to +85
IN
V
V
CC
CC
for block erase,
±0.25 V
±0.5 V
NOTE
2, 4
2, 4
2
2
2
3
3
LH28F800SGH-L70
LH28F800SG-L70
(NOTE 5)
MIN.
100
100
70
10
40
40
40
10
30
- 35 -
1
5
5
0
0
0
5. See Fig. 10 "Transient Input/Output Reference
6. See Fig. 11 "Transient Input/Output Reference
MAX.
˚
C
90
LH28F800SG-L/SGH-L (FOR TSOP, CSP)
Waveform" and Fig. 12 "Transient Equivalent Testing
Load Circuit" (High Speed Configuration) for testing
characteristics.
Waveform" and Fig. 12 "Transient Equivalent Testing
Load Circuit" (Standard Configuration) for testing
characteristics.
LH28F800SGH-L70
LH28F800SG-L70
(NOTE 6)
MIN.
100
100
80
10
40
40
40
10
30
1
5
5
0
0
0
MAX.
90
LH28F800SGH-L10
LH28F800SG-L10
(NOTE 6)
MIN.
100
100
100
40
40
10
40
10
30
1
5
5
0
0
0
MAX.
90
(NOTE 1)
UNIT
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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