MT8JSF25664HDZ-1G1D1 Micron Technology Inc, MT8JSF25664HDZ-1G1D1 Datasheet - Page 12

• Manufacturer Part Number: MT8JSF25664HDZ-1G1D1
• Manufacturer: Micron Technology Inc

Specifications of MT8JSF25664HDZ-1G1D1

• Main Category: DRAM Module
• Sub-category: DDR3 SDRAM
• Module Type: 204SODIMM
• Device Core Size: 64b
• Organization: 256Mx64
• Total Density: 2GByte
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Number Of Elements: 8
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 204
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

I
Table 11: DDR3 I
Values are for the MT41J64M16 DDR3 SDRAM only and are computed from values specified in the 1Gb (64 Meg x 16)
component data sheet
Table 12: DDR3 I
Values are for the MT41J1284M16 DDR3 SDRAM only and are computed from values specified in the 2Gb (128 Meg x 16)
component data sheet
09005aef83ccf92a
jsf8c128_256x64hdz.pdf – Rev. A 10/09 EN
Parameter
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
Precharge standby ODT current
Active power-down current
Active standby current
Burst read operating current
Burst write operating current
Refresh current
Self refresh temperature current: MAX T
Self refresh temperature current (SRT-enabled): MAX
T
All banks interleaved read current
Reset current
Parameter
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
Precharge power-down current: Slow exit
Precharge power-down current: Fast exit
Precharge quiet standby current
Precharge standby current
Precharge standby ODT current
Active power-down current
DD
C
= 95°C
Specifications
DD
DD
Notes:
Specifications and Conditions – 1GB
Specifications and Conditions – 2GB
1. One module rank in the active I
2. All ranks in this I
C
= 85°C
1GB, 2GB (x64, DR) 204-Pin DDR3 SDRAM SODIMM
DD
condition.
Symbol
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
I
DD2NT
I
I
I
DD2NT
I
DD4W
DD6ET
I
I
DD2Q
DD2N
DD3N
I
I
I
I
I
DD2Q
DD2N
DD2P
DD2P
DD3P
DD4R
DD5B
DD2P
DD2P
DD3P
DD0
DD1
DD6
DD7
DD8
DD0
DD1
12
1
1
2
1
2
1
1
2
2
2
2
2
2
2
2
1
2
2
2
2
1
2
1
1
DD
, the other rank in I
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1600
1600
1328
1768
2080
1888
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
528
728
360
536
560
508
360
520
112
96
48
72
1333
1333
1280
1468
1920
1728
488
648
320
480
520
468
320
480
112
528
648
280
520
520
448
360
96
48
72
DD2P
96
Electrical Specifications
(slow exit).
©2009 Micron Technology, Inc. All rights reserved.
1066
1066
1088
1228
1760
1568
448
568
280
424
440
428
248
440
112
468
568
240
440
440
408
320
96
48
72
96
Units
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA