MT8JSF25664HDZ-1G1D1 Micron Technology Inc, MT8JSF25664HDZ-1G1D1 Datasheet - Page 10

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MT8JSF25664HDZ-1G1D1

Manufacturer Part Number
MT8JSF25664HDZ-1G1D1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT8JSF25664HDZ-1G1D1

Main Category
DRAM Module
Sub-category
DDR3 SDRAM
Module Type
204SODIMM
Device Core Size
64b
Organization
256Mx64
Total Density
2GByte
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Number Of Elements
8
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
204
Mounting
Socket
Lead Free Status / RoHS Status
Compliant
Electrical Specifications
Table 8: Absolute Maximum Ratings
Table 9: Operating Conditions
09005aef83ccf92a
jsf8c128_256x64hdz.pdf – Rev. A 10/09 EN
Symbol
V
Symbol
I
V
I
V
VREF
IN
I
VTT
T
T
OZ
I
V
DD
TT
, V
I
A
C
DD
OUT
Parameter
V
Termination reference current from V
Termination reference voltage (DC) – com-
mand/address bus
Input leakage current; Any
input 0V ≤ V
put 0V ≤ V
other pins not under test =
0V)
Output leakage current; 0V
≤ V
are disabled; ODT is HIGH
V
V
(All other pins not under test = 0V)
Module ambient
operating temperature
DDR3 SDRAM component
case operating temperature
DD
REF
REFDQ
Parameter
V
Voltage on any pin relative to V
OUT
supply voltage
DD
supply leakage current;
Notes:
= V
≤ V
supply voltage relative to V
DD
DD
IN
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions outside those indicated in each device’s data sheet is not implied. Exposure to
absolute maximum rating conditions for extended periods may adversely affect reliability.
IN
≤ 0.95V (All
; DQ and ODT
/2 or V
≤ V
1. V
2. T
3. For further information, refer to technical note TN-00-08: “Thermal Applications,”
4. The refresh rate is required to double when 85°C < T
DD
and address signals’ voltage margin and will reduce timing margins.
available on Micron’s Web site.
A
REFCA
TT
; V
and T
termination voltage in excess of the stated limit will adversely affect the command
REF
= V
in-
C
DD
are simultaneous requirements.
Address in-
puts, RAS#,
CAS#, WE#,
BA
S#, CKE,
ODT, CK, CK#
DM
DQ, DQS,
DQS#
Commercial
Commercial
/2
1GB, 2GB (x64, DR) 204-Pin DDR3 SDRAM SODIMM
SS
SS
TT
10
0.49 × V
20mV
1.425
–600
Min
–16
–10
–8
–4
–8
0
0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DD
Min
–0.4
–0.4
-
0.5 × V
Nom
1.5
0
0
0
0
0
DD
C
Electrical Specifications
≤ 95°C.
0.51 × V
+1.975
+1.975
Max
20mV
1.575
Max
+600
+16
+10
+70
+85
©2009 Micron Technology, Inc. All rights reserved.
+8
+4
+8
DD
+
Units
mA
µA
µA
µA
°C
°C
V
V
Units
V
V
Notes
2, 3, 4
2, 3
1

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