5962-9316603MXA Cypress Semiconductor Corp, 5962-9316603MXA Datasheet - Page 12

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5962-9316603MXA

Manufacturer Part Number
5962-9316603MXA
Description
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of 5962-9316603MXA

Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
5962-9316603MXA
Manufacturer:
E2V
Quantity:
20 000
DSCC FORM 2234
APR 97
a wide variety of configurations, two processing options are provided for selection in the contract using an altered item drawing.
and table IIA. It is recommended that users perform subgroups 7 and 9 after programming to verify the specific program
configuration.
herein, including the requirements of the altered item drawing, shall be satisfied by the manufacturer prior to delivery.
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
3.11 Processing options. Since the device is capable of being programmed by either the manufacturer or the user to result in
3.11.1 Unprogrammed device delivered to the user. All testing shall be verified through group A testing as defined in 3.2.3.1
3.11.2 Manufacturer-programmed device delivered to the user. All testing requirements and quality assurance provisions
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
4.2.2 Additional criteria for device classes Q and V.
a.
b.
c.
d.
a.
b.
c.
(1)
(1)
(2)
(3)
(4)
Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical
The test circuit shall be maintained by the manufacturer under document revision level control and shall be made
Interim and final electrical test parameters shall be as specified in table IIA herein.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
Interim and final electrical test parameters shall be as specified in table IIA herein.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
DEFENSE SUPPLY CENTER COLUMBUS
parameters of method 5004 and substitute lines 1 through 6 of table IIA herein.
available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases,
and power dissipation, as applicable, in accordance with the intent specified in method 1015.
A data retention stress test shall be included as part of the screening procedure and shall consist of the following:
(Steps 1 through 4 are performed at the wafer level.)
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
Dynamic burn-in (method 1015 of MIL-STD-883, test condition D; for circuit, see 4.2.1b herein).
Program 100 percent of the total number of cells, excluding the security bit.
Bake, unbiased, for 72 hours at +140°C or for 48 hours at +150°C or for 8 hours at +200°C, or 2 hours at +300°C for
Perform margin test using Vm = +5.7 V at +25°C using loose timing (i.e., t
Erase.
unassembled devices only.
MICROCIRCUIT DRAWING
COLUMBUS, OHIO 43218-3990
STANDARD
SIZE
A
REVISION LEVEL
AA
≥ 1 µs).
B
SHEET
5962-93166
12

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