BCR 116S H6327 Infineon Technologies, BCR 116S H6327 Datasheet - Page 7

• Manufacturer Part Number: BCR 116S H6327
• Description: TRANS NPN DGTL 50V 100MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BCR 116S H6327

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 150MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Details

Permissible Pulse Load
P
BCR116W
totmax
10
10
10
10
-
3
2
1
0
10
/P
-6
totDC
10
-5
= ƒ (t
10
p
-4
)
10
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
-2
s
t
p
10
0
7
BCR116...
2011-08-19