BCR 116S H6327 Infineon Technologies, BCR 116S H6327 Datasheet - Page 5

• Manufacturer Part Number: BCR 116S H6327
• Description: TRANS NPN DGTL 50V 100MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BCR 116S H6327

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 150MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Details

Total power dissipation P
BCR116
Total power dissipation P
BCR116W
mW
mW
300
250
225
200
175
150
125
100
300
250
225
200
175
150
125
100
75
50
25
75
50
25
0
0
0
0
15
15
30
30
45
45
60
60
75
75
90 105 120 °C
90 105 120 °C
tot
tot
= ƒ (T
= ƒ (T
S
S
)
)
T
T
S
S
150
150
5
Total power dissipation P
BCR116S
Permissible Pulse Load R
BCR116
K/W
mW
10
300
250
225
200
175
150
125
100
10
10
10
10
75
50
25
-1
0
3
2
1
0
10
0
-6
15
10
30
-5
45
10
-4
60
75
10
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
90 105 120 °C
tot
thJS
10
= ƒ (T
BCR116...
-2
= ƒ (t
2011-08-19
S
)
s
T
p
t
p
S
)
150
10
0