BCR 116S H6327 Infineon Technologies, BCR 116S H6327 Datasheet - Page 3

• Manufacturer Part Number: BCR 116S H6327
• Description: TRANS NPN DGTL 50V 100MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BCR 116S H6327

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 150MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Details

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
Collector-emitter saturation voltage
I
Input off voltage
I
Input on voltage
I
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
EB
CB
= 100 µA, I
= 10 µA, I
= 5 mA, V
= 10 mA, I
= 100 µA, V
= 2 mA, V
= 10 mA, V
= 5 V, I
= 40 V, I
= 10 V, f = 1 MHz
C
E
CE
CE
B
E
B
= 0
CE
= 0
CE
= 0.5 mA
= 0
= 0
1)
= 5 V
= 0.3 V
= 5 V, f = 100 MHz
= 5 V
A
= 25°C, unless otherwise specified
1)
3
f
C
Symbol
V
V
I
I
h
V
V
V
R
R
T
CBO
EBO
FE
(BR)CEO
(BR)CBO
CEsat
i(off)
i(on)
cb
1
1
/ R
2
min.
0.09
0.4
0.5
3.2
50
50
70
-
-
-
-
-
Values
typ.
150
4.7
0.1
3
-
-
-
-
-
-
-
-
max.
0.11
100
155
0.3
0.8
1.4
6.2
BCR116...
2011-08-19
-
-
-
-
-
MHz
pF
Unit
V
nA
µA
-
V
k Ω
-