BCR 116S H6327 Infineon Technologies, BCR 116S H6327 Datasheet - Page 6

• Manufacturer Part Number: BCR 116S H6327
• Description: TRANS NPN DGTL 50V 100MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BCR 116S H6327

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 150MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Details

Permissible Pulse Load
P
BCR116
Permissible Pulse Load
P
BCR116S
totmax
totmax
10
10
10
10
10
10
10
10
-
-
3
2
1
0
3
2
1
0
10
10
/P
/P
-6
-6
totDC
totDC
10
10
-5
-5
= ƒ (t
= ƒ (t
10
10
p
p
-4
-4
)
)
10
10
-3
-3
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
10
-2
-2
s
s
t
t
p
p
10
10
0
0
6
Permissible Puls Load R
BCR116S
Permissible Puls Load R
BCR116W
K/W
K/W
10
10
10
10
10
10
10
10
10
10
-1
-1
3
2
1
0
3
2
1
0
10
10
-6
-6
10
10
-5
-5
10
10
-4
-4
10
10
-3
-3
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
thJS
thJS
10
10
= ƒ (t
= ƒ (t
BCR116...
-2
-2
2011-08-19
p
p
s
s
)
)
t
t
p
p
10
10
0
0