BCR 116S H6327 Infineon Technologies, BCR 116S H6327 Datasheet

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BCR 116S H6327

Manufacturer Part Number

BCR 116S H6327

Description

TRANS NPN DGTL 50V 100MA SOT363

Manufacturer

Infineon Technologies

Datasheet

1.BCR_116S_H6327.pdf (11 pages)

Specifications of BCR 116S H6327

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

4.7K

Resistor - Emitter Base (r2) (ohms)

47K

Dc Current Gain (hfe) (min) @ Ic, Vce

70 @ 5mA, 5V

Vce Saturation (max) @ Ib, Ic

300mV @ 500µA, 10mA

Frequency - Transition

150MHz

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

SC-70-6, SC-88, SOT-363

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

-

Lead Free Status / Rohs Status

Details

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Download datasheet (868Kb)

NPN Silicon Digital Transistor

• Switching circuit, inverter, interface circuit,

• Built in bias resistor (R

• BCR116S: Two internally isolated

• BCR116S: For orientation in reel see

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BCR116

BCR116W

Type

BCR116

BCR116S

BCR116W

driver circuit

transistors with good matching

in one multichip package

package information below

1

B

R

1

R

2

C

3

E

EHA07184

2

BCR116S

TR1

C1

E1

6

1

R

R

2

1

1

B2

B1

5

2

R

=4.7 kΩ, R

R

1

2

E2

C2

4

3

EHA07174

TR2

Marking

WGs

WGs

WGs

2

=47 kΩ)

1=B

1=E1

1=B

2=E

2=B1

2=E

1

Pin Configuration

3=C

3=C2

3=C

-

4=E2

-

-

5=B2

-

-

6=C1

-

BCR116...

Package

SOT23

SOT363

SOT323

2011-08-19

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