MT47H64M8CF-25E:G Micron Technology Inc, MT47H64M8CF-25E:G Datasheet - Page 57

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MT47H64M8CF-25E:G

Manufacturer Part Number
MT47H64M8CF-25E:G
Description
64MX8 DDR2 SDRAM PLASTIC PBF FBGA 1.8V
Manufacturer
Micron Technology Inc
Series
-r
Datasheets

Specifications of MT47H64M8CF-25E:G

Format - Memory
RAM
Memory Type
DDR2 SDRAM
Memory Size
512M (64M x 8)
Speed
2.5ns
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 85°C
Package / Case
60-TFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Table 29: DDR2-400/533 Setup and Hold Time Derating Values (
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Command/Address Slew Rate (V/ns)
0.25
0.15
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
–1,450
+187
+179
+167
+150
+125
–110
–175
–285
–350
–525
–800
Δ
+83
–11
–25
–43
–67
t
0
IS
2.0 V/ns
57
–1,125
Δ
–125
–188
–292
–375
–500
–708
CK, CK# Differential Slew Rate
+94
+89
+83
+75
+45
+21
–14
–31
–54
–83
t
0
IH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
–1,420
+217
+209
+197
+180
+155
+113
–145
–255
–320
–495
–770
Δ
+30
+19
t
–13
–37
–80
+5
IS and
t
IS
1.5 V/ns
Input Slew Rate Derating
–1,095
t
+124
+119
+113
+105
–158
–262
–345
–470
–678
Δ
IH)
+75
+51
+30
+16
–24
–53
–95
–1
t
IH
© 2004 Micron Technology, Inc. All rights reserved.
–1,390
+247
+239
+227
+210
+185
+143
–115
–225
–290
–465
–740
Δ
+60
+49
+35
+17
–50
–7
t
IS
1.0 V/ns
–1,065
+154
+149
+143
+135
+105
–128
–232
–315
–440
–648
Δ
+81
+60
+46
+29
–23
–65
+6
t
IH
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