MT47H64M8CF-25E:G Micron Technology Inc, MT47H64M8CF-25E:G Datasheet - Page 30

• Manufacturer Part Number: MT47H64M8CF-25E:G
• Description: 64MX8 DDR2 SDRAM PLASTIC PBF FBGA 1.8V
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H64M8CF-25E:G

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
5. Definitions for I
6. I
7. The following I
tion devices when operated outside of the range 0°C ≤ T
LOW
HIGH
Stable
Floating
Switching Inputs changing between HIGH and LOW every other clock cycle (once per
Switching Inputs changing between HIGH and LOW every other data transfer (once
When
T
When
T
DD1
C
C
≤ 0°C
≥ 85°C
, I
DD4R
, and I
I
ed by 2%; and I
I
ed by 2%; I
30%; and I
T
DD2P
DD0
C
V
V
Inputs stable at a HIGH or LOW level
Inputs at V
two clocks) for address and control signals
per clock) for DQ signals, not including masks or strobes
IN
IN
< 85°C and the 2X refresh option is still enabled)
DD
, I
DD
DD7
≤ V
≥ V
and I
DD1
values must be derated (I
conditions:
IL(AC)max
IH(AC)min
require A12 in EMR1 to be enabled during testing.
, I
DD3P(SLOW)
DD6
DD2N
DD2P
REF
must be derated by 80% (I
30
= V
, I
DD6
must be derated by 20%; I
DD2Q
Electrical Specifications – I
DDQ
and I
must be derated by 4%; I
, I
/2
DD3N
DD7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
, I
must be derated by 7%
512Mb: x4, x8, x16 DDR2 SDRAM
DD3P(FAST)
DD
limits increase) on IT-option or on AT-op-
, I
DD4R
DD6
DD3P
, I
will increase by this amount if
C
DD4R
DD4W
slow must be derated by
≤ 85°C:
© 2004 Micron Technology, Inc. All rights reserved.
and I
, and I
DD5W
DD
DD5W
Parameters
must be derat-
must be derat-