MT47H64M8CF-25E:G Micron Technology Inc, MT47H64M8CF-25E:G Datasheet - Page 2

• Manufacturer Part Number: MT47H64M8CF-25E:G
• Description: 64MX8 DDR2 SDRAM PLASTIC PBF FBGA 1.8V
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT47H64M8CF-25E:G

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 2.5ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 60-TFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 1: Key Timing Parameters
Table 2: Addressing
Figure 1: 512Mb DDR2 Part Numbers
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Parameter
Configuration
Refresh count
Row address
Bank address
Column address
Note:
Speed Grade
1. Not all speeds and configurations are available in all packages.
-187E
-25E
-37E
-25
-3E
-3
Package
Pb-free
84-ball 8mm x 12.5mm FBGA
60-ball 8mm x 10mm FBGA
Lead Solder
84-ball 8mm x 12.5mm FBGA
60-ball 8mm x 10mm FBGA
32 Meg x 4 x 4 banks
Configuration
128 Meg x 4
64 Meg x 8
32 Meg x 16
MT47H
A[11, 9:0] (2K)
128 Meg x 4
A[13:0] (16K)
Example Part Number: MT47H128M4HR-25E :G
BA[1:0] (4)
CL = 3
8K
400
400
400
400
400
400
Configuration
128M4
64M8
32M16
CL = 4
Package
533
533
533
667
533
533
HW
HR
CF
JN
Data Rate (MT/s)
2
-
16 Meg x 8 x 4 banks
-187E
Speed
-37E
-25E
-3E
-25
A[13:0] (16K)
-3
64 Meg x 8
A[9:0] (1K)
BA[1:0] (4)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t CK = 3.75ns, CL = 4
t CK = 3ns, CL = 5
t CK = 3ns, CL = 4
t CK = 2.5ns, CL = 6
t CK = 2.5ns, CL = 5
t CK = 1.875ns, CL = 7
8K
CL = 5
Speed Grade
800
800
667
667
667
512Mb: x4, x8, x16 DDR2 SDRAM
n/a
AT
IT
L
Low power
Industrial temperature
Automotive temperature
Revision
:F/:G
:
Revision
CL = 6
1066
800
800
n/a
n/a
n/a
© 2004 Micron Technology, Inc. All rights reserved.
8 Meg x 16 x 4 banks
32 Meg x 16
A[12:0] (8K)
A[9:0] (1K)
BA[1:0] (4)
8K
t
RC (ns)
Features
54
55
55
54
55
55