BLD6G21L-50,112 NXP Semiconductors, BLD6G21L-50,112 Datasheet - Page 8

• Manufacturer Part Number: BLD6G21L-50,112
• Description: TRANSISTOR DOHERTY W-CDMA SOT113
• Manufacturer: NXP Semiconductors

Specifications of BLD6G21L-50,112

• Transistor Type: LDMOS
• Frequency: 2.017GHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 10.2A
• Current - Test: 170mA
• Voltage - Test: 28V
• Power - Output: 8W
• Package / Case: SOT1130A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063508112

NXP Semiconductors
BLD6G21L-50_BLD6G21LS-50
Product data sheet
Fig 11. Power gain as a function of average load
(dB)
G
(1) f = 2010 MHz
(2) f = 2018 MHz
(3) f = 2025 MHz
p
16
14
12
10
22
V
V
at 0.01 % probability on CCDF.
power; typical values
DS
GS(amp)peak
= 28 V; I
26
= 0 V; 6-carrier TD-SCDMA; PAR = 10.8 dB
Dq
= 170 mA (main); T
30
Fig 10. Power gain and drain efficiency as function of peak amplifier gate-source voltage;
34
V
PAR = 10.8 dB at 0.01 % probability on CCDF.
typical values
DS
= 28 V; I
(1)
(2)
(3)
case
P
38
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
All information provided in this document is subject to legal disclaimers.
001aam436
L(AV)
= 25 °C;
Dq
(dBm)
(dB)
G
= 170 mA; P
15.5
14.5
42
Rev. 2 — 17 August 2010
p
16
15
14
BLD6G21L-50; BLD6G21LS-50
0
L(AV)
0.2
Fig 12. Drain efficiency as a function of average load
= 8 W; T
G
D
p
(%)
(1) f = 2010 MHz
(2) f = 2018 MHz
(3) f = 2025 MHz
D
48
32
16
0
18
case
V
V
at 0.01 % probability on CCDF.
power; typical values
0.4
DS
GS(amp)peak
= 25 °C; f = 2017.5 MHz; 6-carrier TD-SCDMA;
= 28 V; I
V
0.6
= 0 V; 6-carrier TD-SCDMA; PAR = 10.8 dB
Dq
GS(amp)peak
26
= 170 mA (main); T
001aam435
0.8
(V)
43
42
41
40
39
38
37
(%)
D
34
P
(1)
(2)
(3)
L(AV)
© NXP B.V. 2010. All rights reserved.
case
001aam437
(dBm)
= 25 °C;
42
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