BLD6G21L-50,112 NXP Semiconductors, BLD6G21L-50,112 Datasheet - Page 7

• Manufacturer Part Number: BLD6G21L-50,112
• Description: TRANSISTOR DOHERTY W-CDMA SOT113
• Manufacturer: NXP Semiconductors

Specifications of BLD6G21L-50,112

• Transistor Type: LDMOS
• Frequency: 2.017GHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 10.2A
• Current - Test: 170mA
• Voltage - Test: 28V
• Power - Output: 8W
• Package / Case: SOT1130A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063508112

NXP Semiconductors
BLD6G21L-50_BLD6G21LS-50
Product data sheet
Fig 8.
(dB)
G
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
p
17
15
13
11
22
V
f = 2017.5 MHz; 6-carrier TD-SCDMA; PAR = 10.8 dB at
0.01 % probability on CCDF.
power; typical values
Power gain as a function of average load
DS
GS(amp)peak
GS(amp)peak
GS(amp)peak
GS(amp)peak
GS(amp)peak
GS(amp)peak
= 28 V; I
8.3.2 TD-SCDMA
= 0 V
= 0.2 V
= 0.4 V
= 0.5 V
= 0.6 V
= 0.8 V
Dq
30
= 170 mA (main); T
(6)
(5)
(4)
(3)
(2)
(1)
38
P
L(AV)
case
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
All information provided in this document is subject to legal disclaimers.
001aam433
(dBm)
= 25 °C;
46
Rev. 2 — 17 August 2010
BLD6G21L-50; BLD6G21LS-50
Fig 9.
(%)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
D
48
32
16
0
22
V
f = 2017.5 MHz; 6-carrier TD-SCDMA; PAR = 10.8 dB at
0.01 % probability on CCDF.
Drain efficiency as a function of average load
power; typical values
DS
GS(amp)peak
GS(amp)peak
GS(amp)peak
GS(amp)peak
GS(amp)peak
GS(amp)peak
= 28 V; I
= 0 V
= 0.2 V
= 0.4 V
= 0.5 V
= 0.6 V
= 0.8 V
Dq
30
= 170 mA (main); T
38
P
L(AV)
© NXP B.V. 2010. All rights reserved.
case
001aam434
(dBm)
= 25 °C;
(1)
(2)
(3)
(4)
(5)
(6)
46
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