BLD6G21L-50,112 NXP Semiconductors, BLD6G21L-50,112 Datasheet - Page 12

• Manufacturer Part Number: BLD6G21L-50,112
• Description: TRANSISTOR DOHERTY W-CDMA SOT113
• Manufacturer: NXP Semiconductors

Specifications of BLD6G21L-50,112

• Transistor Type: LDMOS
• Frequency: 2.017GHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 10.2A
• Current - Test: 170mA
• Voltage - Test: 28V
• Power - Output: 8W
• Package / Case: SOT1130A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063508112

NXP Semiconductors
11. Abbreviations
12. Revision history
Table 12.
BLD6G21L-50_BLD6G21LS-50
Product data sheet
Document ID
BLD6G21L-50_BLD6G21LS-50 v.2
Modifications:
BLD6G21L-50_BLD6G21LS-50 v.1
Revision history
Table 11.
Acronym
CCDF
CW
LDMOS
PAR
RF
SMD
TD-SCDMA
VSWR
Abbreviations
Release date
20100817
20091028
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•
•
•
•
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TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
All information provided in this document is subject to legal disclaimers.
Description
Complementary Cumulative Distribution Function
Continuous Wave
Laterally Diffused Metal-Oxide Semiconductor
Peak-to-Average power Ratio
Radio Frequency
Surface Mounted Device
Time Division-Synchronous Code Division Multiple Access
Voltage Standing-Wave Ratio
Figure 1 on page
Table 5 on page
Table 6 on page
Table 7 on page
Table 8 on page
Section 8.3 on page
Rev. 2 — 17 August 2010
BLD6G21L-50; BLD6G21LS-50
Data sheet status
Product data sheet
Objective data sheet
3: The typical value of R
3: The values of I
4: Several values have been changed or added.
4: Table has been added.
3: Some corrections have been made.
5: Figures have been updated.
DSX
have been changed.
-
-
Change notice
th(j-case)
has been changed.
Supersedes
BLD6G21L-50_
BLD6G21LS-50 v.1
-
© NXP B.V. 2010. All rights reserved.
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