BLD6G21L-50,112 NXP Semiconductors, BLD6G21L-50,112 Datasheet - Page 10

• Manufacturer Part Number: BLD6G21L-50,112
• Description: TRANSISTOR DOHERTY W-CDMA SOT113
• Manufacturer: NXP Semiconductors

Specifications of BLD6G21L-50,112

• Transistor Type: LDMOS
• Frequency: 2.017GHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 10.2A
• Current - Test: 170mA
• Voltage - Test: 28V
• Power - Output: 8W
• Package / Case: SOT1130A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063508112

NXP Semiconductors
10. Package outline
Fig 14. Package outline SOT1130A
BLD6G21L-50_BLD6G21LS-50
Product data sheet
Flanged ceramic package; 2 mounting holes; 4 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1130A
Outline
version
(1)
max
nom
max
nom
min
min
H
U
0.183
0.148
A
A
4.65
3.76
2
A
0.045
0.035
1.14
0.89
b
0.207
0.197
5.26
5.00
IEC
b
4
b
1
L
0.007
0.004
0.18
0.10
c
9.65
9.40
0.38
0.37
D
JEDEC
9.65
9.40
0.38
0.37
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
All information provided in this document is subject to legal disclaimers.
D
1
D
U
b
D
q
1
2
9.65
9.40
0.38
0.37
1
1
1
References
0
E
Rev. 2 — 17 August 2010
BLD6G21L-50; BLD6G21LS-50
9.65
9.40
0.38
0.37
E
1
0.045
0.035
1.14
0.89
JEITA
F
w
scale
2
5
17.12
16.10
0.674
0.634
H
C
5
0.118
0.106
3.00
2.69
L
3
0.130
0.115
3.30
2.92
w
p
1
10 mm
C
0.067
0.057
F
B
p
1.70
1.45
A
Q
(2)
B
15.24
0.6
q
20.45
20.19
0.805
0.795
European
projection
U
1
E
1
9.91
9.65
0.39
0.38
U
2
Q
0.25
0.01
w
1
© NXP B.V. 2010. All rights reserved.
c
0.51
0.02
w
2
Issue date
09-10-12
10-02-02
sot1130a_po
E
SOT1130A
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