BLD6G21L-50,112 NXP Semiconductors, BLD6G21L-50,112 Datasheet - Page 6

• Manufacturer Part Number: BLD6G21L-50,112
• Description: TRANSISTOR DOHERTY W-CDMA SOT113
• Manufacturer: NXP Semiconductors

Specifications of BLD6G21L-50,112

• Transistor Type: LDMOS
• Frequency: 2.017GHz
• Gain: 13.5dB
• Voltage - Rated: 65V
• Current Rating: 10.2A
• Current - Test: 170mA
• Voltage - Test: 28V
• Power - Output: 8W
• Package / Case: SOT1130A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063508112

NXP Semiconductors
BLD6G21L-50_BLD6G21LS-50
Product data sheet
Fig 5.
(dB)
G
(1) f = 2010 MHz
(2) f = 2018 MHz
(3) f = 2025 MHz
p
16
14
12
10
30
V
V
Power gain as a function of load power;
typical values
DS
GS(amp)peak
= 28 V; I
= 0 V; δ = 10 %; t
Dq
36
= 170 mA (main); T
Fig 7.
(1) f = 2010 MHz
(2) f = 2018 MHz
(3) f = 2025 MHz
V
Input return loss as a function of load power; typical values
42
p
DS
= 100 μs on 1 ms period.
= 28 V; I
(1)
(2)
(3)
P
case
L
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor
All information provided in this document is subject to legal disclaimers.
001aam430
(dBm)
= 25 °C;
Dq
RL
(dB)
= 170 mA; V
48
Rev. 2 — 17 August 2010
in
50
40
30
20
10
BLD6G21L-50; BLD6G21LS-50
0
30
GS(amp)peak
Fig 6.
36
(%)
(1) f = 2010 MHz
(2) f = 2018 MHz
(3) f = 2025 MHz
D
60
40
20
(3)
(2)
(1)
= 0 V; T
0
30
V
V
Drain efficiency as a function of load power;
typical values
DS
GS(amp)peak
= 28 V; I
case
42
= 25 °C; δ = 10 %; t
35
= 0 V; δ = 10 %; t
Dq
P
L
= 170 mA (main); T
001aam432
(dBm)
40
48
p
p
= 100 μs on 1 ms period.
= 100 μs on 1 ms period.
45
© NXP B.V. 2010. All rights reserved.
case
P
001aam431
L
(dBm)
= 25 °C;
(3)
(2)
(1)
50
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