NE5511279A-A CEL, NE5511279A-A Datasheet - Page 7

• Manufacturer Part Number: NE5511279A-A
• Description: MOSFET LD N-CHAN 7.5V 79A
• Manufacturer: CEL

Specifications of NE5511279A-A

• Transistor Type: LDMOS
• Frequency: 900MHz
• Gain: 15dB
• Voltage - Rated: 20V
• Current Rating: 3A
• Current - Test: 400mA
• Voltage - Test: 7.5V
• Power - Output: 40dBm
• Package / Case: 79A
• Forward Transconductance Gfs (max / Min): 0.0023 S
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 3 A
• Power Dissipation: 20 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PACKAGE DIMENSIONS
79A (UNIT: mm)
79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)
Gate
Gate
4.2 MAX.
5.7 MAX.
Source
0.4±0.15
Data Sheet PU10322EJ01V0DS
Drain
0.5
4.0
1.7
6.1
0.5
Source
Through Hole: 0.2 × 33
Drain
Gate
Stop up the hole with a rosin or
something to avoid solder flow.
(Bottom View)
1.5±0.2
3.6±0.2
Source
0.8 MAX.
Drain
NE5511279A
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