NE5511279A-A CEL, NE5511279A-A Datasheet - Page 5

• Manufacturer Part Number: NE5511279A-A
• Description: MOSFET LD N-CHAN 7.5V 79A
• Manufacturer: CEL

Specifications of NE5511279A-A

• Transistor Type: LDMOS
• Frequency: 900MHz
• Gain: 15dB
• Voltage - Rated: 20V
• Current Rating: 3A
• Current - Test: 400mA
• Voltage - Test: 7.5V
• Power - Output: 40dBm
• Package / Case: 79A
• Forward Transconductance Gfs (max / Min): 0.0023 S
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 3 A
• Power Dissipation: 20 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
(T
Gate to Source Leak Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
Output Power
Drain Current
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Added Efficiency
Linear Gain
A
Note P
= +25 C, unless otherwise specified, using our standard test fixture)
DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
in
= 5 dBm
Parameter
Symbol
BV
G
G
I
I
P
P
V
R
GSS
DSS
g
I
L
I
L
add
add
out
D
out
D
m
DSS
th
th
Note
Note
V
V
V
Channel to Case
V
I
f = 900 MHz, V
P
I
f = 460 MHz, V
P
I
Data Sheet PU10322EJ01V0DS
DSS
Dset
Dset
GS
DS
DS
DS
in
in
= 27 dBm,
= 25 dBm,
= 6.0 V
= 8.5 V
= 4.8 V, I
= 3.5 V, I
= 15 A
= 400 mA (RF OFF)
= 400 mA (RF OFF)
Test Conditions
DS
DS
DS
DS
= 1.5 mA
= 900 mA
= 7.5 V,
= 7.5 V,
MIN.
38.5
1.0
20
42
TYP.
40.0
15.0
40.5
2.75
18.5
1.5
2.3
2.5
24
48
50
5
NE5511279A
MAX.
100
100
2.0
dBm
dBm
Unit
C/W
nA
nA
dB
dB
%
%
V
S
V
A
A
3