NE5511279A-A CEL, NE5511279A-A Datasheet
NE5511279A-A
Specifications of NE5511279A-A
Related parts for NE5511279A-A
NE5511279A-A Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz under the 7 ...
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... RECOMMENDED OPERATING CONDITIONS Parameter Symbol Drain to Source Voltage V Gate to Source Voltage V Drain Current Input Power + Ratings Unit Note tot 125 +125 C stg Test Conditions Duty Cycle 50 900 MHz 7 Data Sheet PU10322EJ01V0DS NE5511279A MIN. TYP. MAX. Unit 7.5 8 2.0 3.0 V 2.5 3 dBm ...
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... MHz 7.5 V, out dBm 400 mA (RF OFF) add Dset Note 460 MHz 7.5 V, out dBm 400 mA (RF OFF) add Dset Note L Data Sheet PU10322EJ01V0DS NE5511279A MIN. TYP. MAX. Unit 100 nA 100 nA 1.0 1.5 2 C/W 2 38.5 40.0 dBm 2 15.0 dB 40.5 dBm 2 ...
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... S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] [Device Parameters] URL http://www.csd-nec.com + 7 400 mA) DS Dset 5 P out 4 100 add out 4 100 add Data Sheet PU10322EJ01V0DS NE5511279A ...
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... PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm) Gate (Bottom View) 1.5±0.2 Source Gate Drain 3.6±0.2 4.0 1.7 Source Stop up the hole with a rosin or something to avoid solder flow. Drain Through Hole: 0.2 × 33 0.5 0.5 6.1 Data Sheet PU10322EJ01V0DS NE5511279A Drain 0.8 MAX. 5 ...
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... C or below : seconds : seconds : 3 times : 0.2%(Wt.) or below : 260 C or below : 10 seconds or less : 1 time : 0.2%(Wt.) or below : 350 C or below : 3 seconds or less : 0.2%(Wt.) or below Data Sheet PU10322EJ01V0DS NE5511279A For soldering Condition Symbol IR260 VP215 WS260 HS350-P3 ...
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... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for Data Sheet PU10322EJ01V0DS NE5511279A The M8E 00 0110 7 ...
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... TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 Korea Branch Office TEL: +82-2-558-2120 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 FAX: +852-3107-7309 E-mail: ncsd-hk@elhk.nec.com.hk FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NE5511279A 0302-1 ...