NE5511279A-A CEL, NE5511279A-A Datasheet - Page 4

• Manufacturer Part Number: NE5511279A-A
• Description: MOSFET LD N-CHAN 7.5V 79A
• Manufacturer: CEL

Specifications of NE5511279A-A

• Transistor Type: LDMOS
• Frequency: 900MHz
• Gain: 15dB
• Voltage - Rated: 20V
• Current Rating: 3A
• Current - Test: 400mA
• Voltage - Test: 7.5V
• Power - Output: 40dBm
• Package / Case: 79A
• Forward Transconductance Gfs (max / Min): 0.0023 S
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 3 A
• Power Dissipation: 20 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (T
RECOMMENDED OPERATING CONDITIONS
2
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Note V
Operation in excess of any one of these parameters may result in permanent damage.
DS
Parameter
Parameter
will be used under 12 V on RF operation.
Symbol
Symbol
V
V
V
V
DS
P
T
T
P
I
I
GS
stg
GS
D
DS
D
tot
ch
in
Note
A
= +25 C)
Duty Cycle
f = 900 MHz, V
Data Sheet PU10322EJ01V0DS
55 to +125
Ratings
Test Conditions
125
6.0
3.0
20
20
50%, T
DS
= 7.5 V
on
1 s
Unit
W
V
V
A
C
C
MIN.
0
TYP.
7.5
2.0
2.5
27
NE5511279A
MAX.
8.0
3.0
3.0
30
dBm
Unit
V
V
A