NE5511279A-A CEL, NE5511279A-A Datasheet - Page 6

• Manufacturer Part Number: NE5511279A-A
• Description: MOSFET LD N-CHAN 7.5V 79A
• Manufacturer: CEL

Specifications of NE5511279A-A

• Transistor Type: LDMOS
• Frequency: 900MHz
• Gain: 15dB
• Voltage - Rated: 20V
• Current Rating: 3A
• Current - Test: 400mA
• Voltage - Test: 7.5V
• Power - Output: 40dBm
• Package / Case: 79A
• Forward Transconductance Gfs (max / Min): 0.0023 S
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 3 A
• Power Dissipation: 20 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
S-PARAMETERS
4
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Remark The graphs indicate nominal characteristics.
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
Click here to download S-parameters.
[RF and Microwave]
URL http://www.csd-nec.com/
45
40
35
30
25
20
45
40
35
30
25
20
10
10
OUTPUT POWER, DRAIN CURRENT,
OUTPUT POWER, DRAIN CURRENT,
d
d
,
,
f = 900 MHz
f = 460 MHz
add
add
15
15
vs. INPUT POWER
vs. INPUT POWER
Input Power P
Input Power P
20
20
[Device Parameters]
25
in
25
in
(dBm)
(dBm)
A
30
30
= +25 C, V
P
P
I
I
DS
DS
add
add
out
out
d
d
Data Sheet PU10322EJ01V0DS
35
35
5
4
3
2
1
0
5
4
3
2
1
0
DS
= 7.5 V, I
100
75
50
25
0
100
75
50
25
0
Dset
= 400 mA)
NE5511279A