STB80NF10T4 STMicroelectronics, STB80NF10T4 Datasheet - Page 8

• Manufacturer Part Number: STB80NF10T4
• Description: MOSFET N-CH 100V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB80NF10T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 182nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2489-2

Test circuits
3
8/14
Figure 13. Switching times test circuit for
Figure 15. Test circuit for inductive load
Figure 17. Unclamped inductive waveform
25 Ω
P
V
W
DD
G
V
D
S
GS
D.U.T.
A
B
resistive load
switching and diode recovery times
Test circuits
I
D
V
R
D
G
R
G
FAST
DIODE
B
A
I
DM
V
G
A
B
D
R
D.U.T.
L
S
D
L=100µH
V
2200
µF
(BR)DSS
3.3
µF
3.3
µF
1000
Doc ID 6958 Rev 18
µF
AM01468v1
AM01472v1
AM01470v1
V
DD
V
DD
V
DD
Figure 14. Gate charge test circuit
Figure 16. Unclamped inductive load test
Figure 18. Switching time waveform
V
P
i
V
W
0
0
i
=20V=V
P
w
10%
2200
µF
1kΩ
GMAX
td
circuit
on
I
90%
V
t
D
on
D
I
G
2.7kΩ
12V
t
=CONST
r
47kΩ
10%
V
GS
L
STB80NF10, STP80NF10
D.U.T.
V
47kΩ
100Ω
DS
2200
µF
100nF
90%
td
off
t
off
3.3
µF
D.U.T.
t
f
10%
AM01469v1
AM01471v1
AM01473v1
1kΩ
90%
V
V
V
G
DD
DD