STB80NF10T4 STMicroelectronics, STB80NF10T4 Datasheet - Page 7

MOSFET N-CH 100V 80A D2PAK

STB80NF10T4

Manufacturer Part Number
STB80NF10T4
Description
MOSFET N-CH 100V 80A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB80NF10T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
182nC @ 10V
Input Capacitance (ciss) @ Vds
5500pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2489-2

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STB80NF10, STP80NF10
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
Gate charge vs. gate-source voltage Figure 9.
vs. temperature
characteristics
Doc ID 6958 Rev 18
Figure 11. Normalized on resistance vs.
Capacitance variations
temperature
Electrical characteristics
7/14

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