STB80NF10T4 STMicroelectronics, STB80NF10T4 Datasheet - Page 11
STB80NF10T4
Manufacturer Part Number
STB80NF10T4
Description
MOSFET N-CH 100V 80A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STP80NF10.pdf
(14 pages)
Specifications of STB80NF10T4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
182nC @ 10V
Input Capacitance (ciss) @ Vds
5500pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2489-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB80NF10T4
Manufacturer:
ST
Quantity:
7 225
Company:
Part Number:
STB80NF10T4
Manufacturer:
ST MICROELECTRONICS
Quantity:
30 000
Part Number:
STB80NF10T4
Manufacturer:
ST
Quantity:
20 000
STB80NF10, STP80NF10
Dim
A1
D1
E1
V2
b2
e1
L1
L2
c2
J1
A
D
E
H
R
b
e
L
c
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
8.50
4.88
2.49
2.29
1.27
1.30
Min
10
15
0°
D²PAK (TO-263) mechanical data
Doc ID 6958 Rev 18
2.54
mm
Typ
0.4
10.40
15.85
Max
4.60
0.23
0.93
1.70
0.60
1.36
9.35
5.28
2.69
2.79
1.40
1.75
8°
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
0.192
0.590
0.099
0.090
0.051
0.05
Min
0°
Package mechanical data
0.016
inch
Typ
0.1
0.009
0.067
0.053
0.208
0.106
0.069
0.181
0.037
0.024
0.368
0.409
0.624
0.110
0.055
Max
8°
11/14