STB80NF10T4 STMicroelectronics, STB80NF10T4 Datasheet

MOSFET N-CH 100V 80A D2PAK

STB80NF10T4

Manufacturer Part Number
STB80NF10T4
Description
MOSFET N-CH 100V 80A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB80NF10T4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
182nC @ 10V
Input Capacitance (ciss) @ Vds
5500pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2489-2

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Features
Applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for telecom
and computer application. It is also intended for
any application with low gate charge drive
requirements.
Table 1.
April 2009
Exceptional dv/dt capability
100% Avalanche tested
Application oriented characterization
Switching applications
STP80NF10
STB80NF10
STB80NF10T4
Type
Order codes
STP80NF10
Device summary
100 V
100 V
V
DSS
N-channel 100 V, 0.012 Ω , 80 A, TO-220, D
< 0.015 Ω
< 0.015 Ω
low gate charge STripFET™ II Power MOSFET
R
max
DS(on)
B80NF10@
P80NF10@
Marking
Doc ID 6958 Rev 18
80 A
80 A
I
D
Figure 1.
Package
TO-220
D²PAK
TO-220
Internal schematic diagram
1
2
3
STB80NF10
STP80NF10
Tape and reel
D²PAK
Packaging
Tube
1
3
www.st.com
2
PAK
1/14
14

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STB80NF10T4 Summary of contents

Page 1

... DC-DC converters for telecom and computer application also intended for any application with low gate charge drive requirements. Table 1. Device summary Order codes STP80NF10 STB80NF10T4 April 2009 low gate charge STripFET™ II Power MOSFET R DS(on max < 0.015 Ω ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STB80NF10, STP80NF10 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Drain-source V (BR)DSS breakdown voltage Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current (V V Gate threshold voltage ...

Page 5

STB80NF10, STP80NF10 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/14 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance Doc ID 6958 Rev 18 STB80NF10, STP80NF10 ...

Page 7

STB80NF10, STP80NF10 Figure 8. Gate charge vs. gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs. temperature Figure 12. Source-drain diode forward characteristics Capacitance variations Figure 11. Normalized on resistance vs. temperature Doc ID 6958 Rev 18 Electrical ...

Page 8

Test circuits 3 Test circuits Figure 13. Switching times test circuit for resistive load D.U. Figure 15. Test circuit for inductive load switching and diode recovery times ...

Page 9

STB80NF10, STP80NF10 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ...

Page 10

Package mechanical data Dim L20 L30 ∅P Q 10/14 TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 ...

Page 11

STB80NF10, STP80NF10 Dim D²PAK (TO-263) mechanical data mm Min Typ Max 4.40 4.60 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 ...

Page 12

Packaging mechanical data 5 Packaging mechanical data 2 D PAK FOOTPRINT TAPE MECHANICAL DATA mm DIM. MIN. A0 10.5 B0 15.7 D 1.5 D1 1.59 E 1.65 F 11.4 K0 4.8 P0 3.9 P1 11 ...

Page 13

STB80NF10, STP80NF10 6 Revision history Table 8. Document revision history Date 04-Nov-2003 13-Dec-2004 16-Dec-2004 27-Jan-2005 22-Feb-2005 28-Feb-2005 01-Mar-2005 06-Apr-2006 25-Jan-2007 17-Nov-2008 15-Apr-2009 Revision 8 New datasheet according to PCN DSG-TRA/03/382 9 D²PAK inserted 10 @ inserted in table 2 for ...

Page 14

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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