STB80NF10T4 STMicroelectronics, STB80NF10T4 Datasheet - Page 4

• Manufacturer Part Number: STB80NF10T4
• Description: MOSFET N-CH 100V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB80NF10T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 182nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2489-2

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 6.
V
Symbol
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
t
C
I
I
DS(on)
C
C
GS(th)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
=25 °C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 6958 Rev 18
V
R
(see Figure 15)
V
V
V
V
V
I
V
V
V
V
V
D
GS
GS
DD
DS
DS
DD
G
DS
DS
GS
DS
GS
= 250 µA, V
= 4.7 Ω, V
= 50 V, I
= 25 V
= 25 V, f = 1 MHz,
= 0
= 50 V, I
= 10 V
= Max rating
= Max rating @125°C
= ±20 V
= V
= 10 V, I
Test conditions
Test conditions
Test conditions
GS
, I
,
D
D
D
I
D
D
GS
= 40 A,
GS
= 250 µA
= 80 A,
= 40 A
=40 A
=10 V
= 0
Min.
Min.
Min.
100
STB80NF10, STP80NF10
-
2
-
-
-
0.012
5500
Typ.
Typ.
Typ.
51.3
116
700
175
135
26
80
60
50
23
3
0.015
Max.
Max.
Max.
±100
182
500
10
4
-
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nA
µA
nA
S
V
V
Ω