PHT8N06LT,135 NXP Semiconductors, PHT8N06LT,135 Datasheet - Page 8

• Manufacturer Part Number: PHT8N06LT,135
• Description: MOSFET N-CH 55V 7.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHT8N06LT,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 5A, 5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 5 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 13 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054610135; PHT8N06LT /T3; PHT8N06LT /T3

Philips Semiconductors
MECHANICAL DATA
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
2. Refer to surface mounting instructions for SOT223 envelope.
3. Epoxy meets UL94 V0 at 1/8".
January 1998
TrenchMOS
Logic level FET
Dimensions in mm
Net Mass: 0.11 g
damage to MOS gate oxide.
transistor
max
16
max
1.8
0.10
0.02
max
0.32
0.24
10
Fig.18. SOT223 surface mounting package.
13
1.05
0.85
8
1
2.3
3.1
2.9
6.7
6.3
4.6
0.80
0.60
2
4
3
A
B
0.1
(4x)
3.7
3.3
M
Product specification
B
7.3
6.7
PHT8N06LT
0.2
Rev 1.100
M
A