PHT8N06LT,135 NXP Semiconductors, PHT8N06LT,135 Datasheet - Page 4

• Manufacturer Part Number: PHT8N06LT,135
• Description: MOSFET N-CH 55V 7.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHT8N06LT,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 5A, 5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 5 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 13 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054610135; PHT8N06LT /T3; PHT8N06LT /T3

Philips Semiconductors
January 1998
TrenchMOS
Logic level FET
ID/A
ID% = 100 I
100
0.1
I
10
Fig.2. Normalised continuous drain current.
D
1
120
110
100
120
110
100
RDS(ON) = VDS/ID
90
80
70
60
50
40
30
20
10
1
90
80
70
60
50
40
30
20
10
& I
0
0
Fig.3. Safe operating area. T
Fig.1. Normalised power dissipation.
0
0
DM
PD%
ID%
= f(V
PD% = 100 P
20
20
D
/I
D 25 ˚C
DS
DC
); I
40
40
transistor
DM
= f(T
single pulse; parameter t
60
60
Tmb / C
D
Tmb / C
sp
/P
10
); conditions: V
Normalised Current Derating
D 25 ˚C
80
80
Normalised Power Derating
VDS/V
100
100
= f(T
sp
sp
= 25 ˚C
120
120
)
GS
140
140
tp =
1 us
100 us
10ms
100ms
10us
1 ms
5 V
100
p
4
Fig.5. Typical output characteristics, T
Fig.6. Typical on-state resistance, T
115
110
105
100
0.01
100
40
30
20
10
95
90
85
80
75
70
0.1
10
0
1
5
0
RDS(ON)/mOhm
Drain current, ID (A)
Zth/ (K/W)
Fig.4. Transient thermal impedance.
0.5
0.2
0.1
0.05
0.02
1.0E-06
Z
R
th j-sp
10
7
6
I
DS(ON)
2
D
= f(V
10
= f(t); parameter D = t
Drain-source voltage, VDS (V)
0.0001
= f(I
ID/A
DS
4
); parameter V
D
); parameter V
t/s
15
0.01
6
P
D
4
Product specification
VGS = 5.0 V
t
2.4
p
PHT8N06LT
T
GS
20
4.8
4.6
1
4.2
4.4
GS
p
8
/T
D =
j
j
= 25 ˚C .
= 25 ˚C .
t
T
5
p
4.6
t
4.0
3.6
3.2
3.0
2.6
Rev 1.100
100
10
25