PHT8N06LT,135 NXP Semiconductors, PHT8N06LT,135 Datasheet - Page 6

• Manufacturer Part Number: PHT8N06LT,135
• Description: MOSFET N-CH 55V 7.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHT8N06LT,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 5A, 5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 5 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 13 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054610135; PHT8N06LT /T3; PHT8N06LT /T3

Philips Semiconductors
January 1998
TrenchMOS
Logic level FET
Fig.13. Typical turn-on gate-charge characteristics.
VDS/V
IF/A
V
I
F
40
30
20
10
GS
6
5
4
3
2
1
0
0
= f(V
0
0
= f(Q
Fig.14. Typical reverse diode current.
SDS
G
); conditions: V
); conditions: I
2
Tj/V =
0.5
transistor
4
150
VDS = 14V
D
GS
1
6
= 7 A; parameter V
QG/nC
= 0 V; parameter T
VSDS/V
25
8
1.5
VDS = 44V
10
DS
j
12
2
6
VGS
0
Fig.15. Normalised avalanche energy rating.
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.16. Avalanche energy test circuit.
W
20
WDSS%
W
DSS
DSS
% = f(T
RGS
40
0.5 LI
60
sp
); conditions: I
D
2
BV
80
Tmb / C
DSS
L
VDS
100
BV
T.U.T.
Product specification
DSS
D
PHT8N06LT
= 2.5 A
120
shunt
R 01
V
DD
-
+
140
Rev 1.100
-ID/100
VDD