PHT8N06LT,135 NXP Semiconductors, PHT8N06LT,135 Datasheet - Page 7

• Manufacturer Part Number: PHT8N06LT,135
• Description: MOSFET N-CH 55V 7.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHT8N06LT,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 5A, 5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 11.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 650pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 5 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 13 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934054610135; PHT8N06LT /T3; PHT8N06LT /T3

Philips Semiconductors
PRINTED CIRCUIT BOARD
January 1998
TrenchMOS
Logic level FET
transistor
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick).
Fig.17. PCB for thermal resistance and power rating for SOT223.
60
10
9
50
4.6
7
36
15
7
4.5
18
Product specification
Dimensions in mm.
PHT8N06LT
Rev 1.100