APT100GN60LDQ4G Microsemi Power Products Group, APT100GN60LDQ4G Datasheet - Page 9

• Manufacturer Part Number: APT100GN60LDQ4G
• Description: IGBT 600V 229A 625W TO264
• Manufacturer: Microsemi Power Products Group

Specifications of APT100GN60LDQ4G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 100A
• Current - Collector (ic) (max): 229A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GN60LDQ4GMI; APT100GN60LDQ4GMI

TYPICAL PERFORMANCE CURVES
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
1
4
5
2
3
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
F
RRM
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
line through I
current goes from positive to negative, to the point at which the straight
- Maximum Reverse Recovery Current.
+18V
0V
RRM
and 0.25 I
RRM
passes through zero.
Figure 33, Diode Reverse Recovery Waveform and Definitions
RRM
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Dimensions in Millimeters and (Inches)
TO-264(L) Package Outline
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
and t rr .
e1 SAC: Tin, Silver, Copper
di
F
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
/dt Adjust
0.76 (.030)
1.30 (.051)
5.45 (.215) BSC
Figure 32. Diode Test Circuit
2.79 (.110)
3.18 (.125)
2-Plcs.
30µH
Zero
19.51 (.768)
20.50 (.807)
V r
APT60M75L2LL
1
TRANSFORMER
PEARSON 2878
CURRENT
2
Gate
Collector
(Cathode)
Emitter
(Anode)
D.U.T.
3.10 (.122)
3.48 (.137)
2.29 (.090)
2.69 (.106)
3
4
APT100GN60LDQ4(G)
5
t rr / Q rr
Waveform
0.25 I RRM