APT100GN60LDQ4G Microsemi Power Products Group, APT100GN60LDQ4G Datasheet - Page 8

• Manufacturer Part Number: APT100GN60LDQ4G
• Description: IGBT 600V 229A 625W TO264
• Manufacturer: Microsemi Power Products Group

Specifications of APT100GN60LDQ4G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 100A
• Current - Collector (ic) (max): 229A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GN60LDQ4GMI; APT100GN60LDQ4GMI

Figure 27. Reverse Recovery Charge vs. Current Rate of Change
Figure 29. Dynamic Parameters vs. Junction Temperature
4000
3500
3000
2500
2000
1500
1000
1400
1200
1000
800
600
400
200
300
250
200
150
100
500
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Figure 31. Junction Capacitance vs. Reverse Voltage
50
0
0
0
Figure 25. Forward Current vs. Forward Voltage
0
0
0
1
-di
I
RRM
V
F
F
T
T
t
T
/dt, CURRENT RATE OF CHANGE (A/µs)
V
, ANODE-TO-CATHODE VOLTAGE (V)
rr
J
J
R
J
200
, JUNCTION TEMPERATURE (°C)
=125°C
T
0.5
=400V
25
100A
= 125°C
J
V
= 175°C
R
, REVERSE VOLTAGE (V)
T
J
400
1.0
50
= 25°C
10
600
1.5
75
Q
rr
800
100
2.0
T
J
Q
= -55°C
t
1000
rr
rr
125
2.5
50A
200A
100 200
1200
3.0
150
Figure 26. Reverse Recovery Time vs. Current Rate of Change
Figure 30. Maximum Average Forward Current vs. CaseTemperature
Figure 28. Reverse Recovery Current vs. Current Rate of Change
300
250
200
150
100
180
160
140
120
100
80
60
40
20
50
60
50
40
30
20
10
0
0
0
25
0
0
-di
-di
T
V
F
J
F
R
T
V
/dt, CURRENT RATE OF CHANGE(A/µs)
=125°C
J
/dt, CURRENT RATE OF CHANGE (A/µs)
=400V
R
=125°C
200
=400V
200
50
Case Temperature (°C)
400
400
75
100
600
600
200A
200A
100A
800
800
125
50A
Duty cycle = 0.5
100A
1000
T
1000
150
J
50A
=175°C
1200
1200
175