APT100GN60LDQ4G Microsemi Power Products Group, APT100GN60LDQ4G Datasheet

IGBT 600V 229A 625W TO264

APT100GN60LDQ4G

Manufacturer Part Number
APT100GN60LDQ4G
Description
IGBT 600V 229A 625W TO264
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT100GN60LDQ4G.pdf (9 pages)

Specifications of APT100GN60LDQ4G

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.85V @ 15V, 100A
Current - Collector (ic) (max)
229A
Power - Max
625W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT100GN60LDQ4GMI
APT100GN60LDQ4GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT100GN60LDQ4G
Manufacturer:
INFINEON
Quantity:
4 390
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
APT100GN60LDQ4G
Manufacturer:
HITACHI
Quantity:
20 000
TYPICAL PERFORMANCE CURVES
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
•
• Trench Gate: Low V
• Easy Paralleling
• 6µs Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
600V Field Stop
SSOA
R
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
G(int)
T
CES
CM
C1
C2
GE
CE(ON)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
and are ideal for low frequency applications that require absolute minimum
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(ON)
CE(on)
temperature coefficient. A built-in gate resistor ensures
1
(V
CE
CE
CE
8
8
= V
= 600V, V
= 600V, V
APT Website - http://www.advancedpower.com
®
@ T
@ T
GE
GE
GE
GE
J
= 15V, I
= 15V, I
C
C
= 175°C
= ±20V)
, I
= 25°C
= 110°C
C
GE
= 1mA, T
GE
GE
C
C
= 0V, I
= 0V, T
= 0V, T
= 100A, T
= 100A, T
j
C
= 25°C)
j
j
= 4mA)
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
1.05
APT100GN60LDQ4(G)
MIN
600
5.0
APT100GN60LDQ4
APT100GN60LDQ4G*
300A @ 600V
-55 to 175
1.45
1.87
TYP
APT100GN60LDQ4(G)
600
±30
229
135
300
625
300
5.8
2
600V
G
MAX
TBD
1.85
600
6.5
50
TO-264
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
Ω

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APT100GN60LDQ4G Summary of contents

Page 1

... T = 25° 600V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 600V APT100GN60LDQ4(G) APT100GN60LDQ4 APT100GN60LDQ4G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. TO-264 G = 25°C unless otherwise specified. C APT100GN60LDQ4(G) 600 ±30 229 135 300 300A @ 600V 625 -55 to 175 300 MIN TYP ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc SSOA Switching Safe Operating ...

Page 3

V = 15V GE 250 200 150 100 0.5 1.0 1.5 2.0 2.5 3.0 3 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J 300 250µs PULSE TEST<0.5 % DUTY T = -55°C CYCLE ...

Page 4

V = 15V 400V 25°C or 125° 1.0Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE ...

Page 5

TYPICAL PERFORMANCE CURVES 10,000 5,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.25 0. 0.9 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0. ...

Page 6

APT100DQ60 90% Gate Voltage t d(off Collector Voltage 90% 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions T = 125°C J Gate Voltage 10% ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty) F Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 25°C J 250 200 T = 175°C J 150 T = 125°C J 100 -55° 0.5 1.0 1.5 2 ANODE-TO-CATHODE VOLTAGE (V) F Figure 25. Forward Current vs. Forward ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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