APT100GN60LDQ4G Microsemi Power Products Group, APT100GN60LDQ4G Datasheet - Page 3

• Manufacturer Part Number: APT100GN60LDQ4G
• Description: IGBT 600V 229A 625W TO264
• Manufacturer: Microsemi Power Products Group

Specifications of APT100GN60LDQ4G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 100A
• Current - Collector (ic) (max): 229A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GN60LDQ4GMI; APT100GN60LDQ4GMI

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
300
250
200
150
100
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
0.5
50
50
0
0
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
T
GE
0.5
250µs PULSE
T
= 15V
J
J
2
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
= 175°C
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
1.0
10
0
4
1.5
25
T
T
I
6
J
T
C
J
= 125°C
J
= 50A
2.0
= 25°C
I
12
50
= -55°C
C
= 100A
8
2.5
75
I
<0.5 % DUTY CYCLE
250µs PULSE TEST
C
= 200A
10
100 125 150
T
3.0
14
J
= 25°C.
J
12
3.5
= 25°C)
4.0
16
14
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
350
300
250
200
150
100
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
0.5
50
16
14
12
10
50
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
0
0
-50 -25
V
0
0
0
CE
I
T
<0.5 % DUTY CYCLE
C
250µs PULSE TEST
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 100A
= 25°C
100
25
V
15V
T
5
GE
T
C
J
= 15V.
V
, Junction Temperature (°C)
0
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
CE
200
50
V
GATE CHARGE (nC)
CE
= 300V
10
25
12V
= 120V
300
75
50
11V
15
400
75 100 125 150 175
100
10V
20
500
125
V
9V
CE
25
600
J
150
= 480V
8V
= 125°C)
7V
700
175
30