APT100GN60LDQ4G Microsemi Power Products Group, APT100GN60LDQ4G Datasheet - Page 5

• Manufacturer Part Number: APT100GN60LDQ4G
• Description: IGBT 600V 229A 625W TO264
• Manufacturer: Microsemi Power Products Group

Specifications of APT100GN60LDQ4G

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 100A
• Current - Collector (ic) (max): 229A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GN60LDQ4GMI; APT100GN60LDQ4GMI

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature. (°C)
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
0.25
0.20
0.15
0.10
0.05
500
100
V
Junction
temp. (°C)
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
(watts)
Power
-5
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
10
0.949
0.116
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
ies
oes
res
0.00708
0.244
50
SINGLE PULSE
10
-3
100
Figure 20, Operating Frequency vs Collector Current
50
10
4
10
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 1.0Ω
350
300
250
200
150
100
= 400V
30
Figure 18,Minimim Switching Safe Operating Area
-2
50
0
°
I
°
C
C
0
C
V
, COLLECTOR CURRENT (A)
CE
50
100
, COLLECTOR TO EMITTER VOLTAGE
70
200
Note:
90
Peak T J = P DM x Z θJC + T C
300
10
Duty Factor D =
-1
110
400
t 1
130
t 2
APT100GN60LDQ4(G)
500
t 1
150
/
t 2
600
F
f
f
P
max1
max2
max
diss
1.0
700
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f