BLF6G22-45 /T3 NXP Semiconductors, BLF6G22-45 /T3 Datasheet - Page 5

• Manufacturer Part Number: BLF6G22-45 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-45 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22-45,135

NXP Semiconductors
8. Test information
BLF6G22-45_2
Product data sheet
Fig 4.
(dB)
G
p
20
19
18
17
16
15
0
V
f
2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
2
DS
= 2167.5 MHz; carrier spacing 5 MHz.
= 28 V; I
2
Dq
= 405 mA; f
4
Fig 6.
input
50
V
6
1
GG
See
Test circuit for operation at 2110 MHz and 2170 MHz
= 2162.5 MHz;
Table 8
G
D
p
C3
8
P
001aah607
L(AV)
for list of components.
(W)
C4
10
C2
C1
Rev. 02 — 21 April 2008
30
25
20
15
10
5
(%)
C5
D
R1
C6
Fig 5.
C7
ACPR
(dBc)
30
35
40
45
50
55
60
0
V
f
2-carrier W-CDMA adjacent power channel
ratio as a function of average load power;
typical values
2
DS
= 2167.5 MHz; carrier spacing 5 MHz.
= 28 V; I
2
C10
Dq
= 405 mA; f
C8
4
C11 C12 C13 C14 C15
Power LDMOS transistor
BLF6G22-45
C9
6
1
= 2162.5 MHz;
C18
C17
© NXP B.V. 2008. All rights reserved.
8
P
001aah608
L(AV)
001aah609
C16
(W)
output
50
V
10
DD
5 of 10