BLF6G22-45 /T3 NXP Semiconductors, BLF6G22-45 /T3 Datasheet - Page 2

• Manufacturer Part Number: BLF6G22-45 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-45 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22-45,135

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLF6G22-45_2
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
Type number
BLF6G22-45
Symbol
V
V
T
T
Symbol
R
stg
j
DS
GS
th(j-case)
RF power amplifiers for W-CDMA base stations and multicarrier applications in the
2000 MHz to 2200 MHz frequency range
Connected to flange.
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Parameter
thermal resistance from junction
to case
Description
drain
gate
source
Package
Name
-
Rev. 02 — 21 April 2008
Description
flanged ceramic package; 2 mounting holes; 2 leads
Conditions
[1]
Conditions
T
P
case
L
= 12.5 W (CW)
= 80 C;
Simplified outline
1
2
Power LDMOS transistor
BLF6G22-45
3
Graphic symbol
Min
-
-
Typ
1.7
© NXP B.V. 2008. All rights reserved.
0.5
65
2
Max
65
+13
+150
225
sym112
Version
SOT608A
1
3
Unit
K/W
2 of 10
Unit
V
V
C
C