BLF6G38-50 NXP Semiconductors, BLF6G38-50 Datasheet - Page 7

• Manufacturer Part Number: BLF6G38-50
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-50

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 16.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 70W(Typ)
• Power Gain (typ)@vds: 14@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 5.6S
• Drain Source Resistance (max): 290@6.15Vmohm
• Reverse Capacitance (typ): 1.17@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 23%
• Mounting: Screw
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-50,112

NXP Semiconductors
8. Test information
Table 9.
For test circuit, see
[1]
[2]
[3]
BLF6G38-50_BLF6G38LS-50
Product data sheet
Component
C1, C4, C5, C6
C2
C3, C8, C9
C7
C10
R1, R2
L1
Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit
American Technical Ceramics type 100A or capacitor of same quality.
Vishay VJ1206Y104KXB or capacitor of same quality.
TDK C5750X7R1H106M or capacitor of same quality.
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
See
List of components
Table 9
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
ferrite SMD bead
Figure
for list of components.
Table 10.
f
(GHz)
3.4
3.5
3.6
3.8
10.
C3
Measured test circuit impedances
C1
R2
All information provided in this document is subject to legal disclaimers.
BLF6G38-50
INPUT-REV 1A
30RF35
NXP
C2
Rev. 02 — 1 June 2010
C4
R1
BLF6G38-50; BLF6G38LS-50
Value
10 pF
0.7 pF
100 nF
10 μF; 50 V
470 μF; 63 V
9.1 Ω
-
Z
(Ω)
5.48 − j9.38
5.39 − j9.43
5.55 − j9.15
9.60 − j12.48
i
C6
C8
C5
[1]
[1]
[2]
[3]
C9
Remarks
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
C7
BLF6G38-50
OUTPUT-REV 1A
30RF35
NXP
WiMAX power LDMOS transistor
r
= 3.5 and thickness = 0.76 mm.
L1
Z
(Ω)
12.42 − j4.58
10.41 − j5.31
14.31 − j7.04
17.70 − j11.57
o
001aah404
C10
© NXP B.V. 2010. All rights reserved.
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