BLF6G38-50 NXP Semiconductors, BLF6G38-50 Datasheet - Page 5

• Manufacturer Part Number: BLF6G38-50
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-50

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 16.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 70W(Typ)
• Power Gain (typ)@vds: 14@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 5.6S
• Drain Source Resistance (max): 290@6.15Vmohm
• Reverse Capacitance (typ): 1.17@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 23%
• Mounting: Screw
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-50,112

NXP Semiconductors
BLF6G38-50_BLF6G38LS-50
Product data sheet
Fig 4.
(dB)
G
p
16
15
14
13
12
11
10
3400
V
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
Power gain and drain efficiency as functions
of frequency; typical values
DS
= 28 V; I
7.3.1 Graphs
η
G
7.3 Single carrier N-CDMA broadband performance at 9 W average
D
p
3450
Dq
= 450 mA; Single Carrier N-CDMA;
Fig 3.
3500
(1)
(2)
(3)
Adjacent channel power ratio as a function of average load power; typical values
V
f = 10 MHz
f = 20 MHz
f = 30 MHz
DS
3550
= 28 V; I
All information provided in this document is subject to legal disclaimers.
f (MHz)
001aah398
Dq
ACPR
(dBc)
3600
= 450 mA; f = 3500 MHz.
−20
−30
−40
−50
−60
−70
Rev. 02 — 1 June 2010
26
25
24
23
22
21
20
(%)
η
0
D
BLF6G38-50; BLF6G38LS-50
Fig 5.
ACPR
(dBc)
4
(1) Low frequency component
(2) High frequency component
−40
−50
−60
−70
3400
V
PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz.
Adjacent channel power ratio as a function of
frequency; typical values
DS
= 28 V; I
(1)
(2)
(3)
8
3450
P
Dq
L(AV)
WiMAX power LDMOS transistor
= 450 mA; Single Carrier N-CDMA;
001aah397
(W)
(1)
(2)
(1)
(2)
(1)
(2)
3500
12
3550
© NXP B.V. 2010. All rights reserved.
ACPR
ACPR
ACPR
f (MHz)
001aah399
885k
1500k
1980k
3600
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