BLF6G38-50 NXP Semiconductors, BLF6G38-50 Datasheet - Page 7
![RF MOSFET Small Signal LDMOS TNS](/photos/40/60/406026/sot502a_sml.jpg)
BLF6G38-50
Manufacturer Part Number
BLF6G38-50
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G38-50.pdf
(13 pages)
Specifications of BLF6G38-50
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.29 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
16.5 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
SOT502B
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
70W(Typ)
Power Gain (typ)@vds
14@28VdB
Frequency (min)
3.4GHz
Frequency (max)
3.6GHz
Package Type
LDMOST
Pin Count
3
Forward Transconductance (typ)
5.6S
Drain Source Resistance (max)
290@6.15Vmohm
Reverse Capacitance (typ)
1.17@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
23%
Mounting
Screw
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G38-50,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF6G38-50
Manufacturer:
NXP
Quantity:
120
Company:
Part Number:
BLF6G38-50
Manufacturer:
NXP
Quantity:
1 000
NXP Semiconductors
8. Test information
Table 9.
For test circuit, see
[1]
[2]
[3]
BLF6G38-50_BLF6G38LS-50
Product data sheet
Component
C1, C4, C5, C6
C2
C3, C8, C9
C7
C10
R1, R2
L1
Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit
American Technical Ceramics type 100A or capacitor of same quality.
Vishay VJ1206Y104KXB or capacitor of same quality.
TDK C5750X7R1H106M or capacitor of same quality.
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with ε
See
List of components
Table 9
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
SMD resistor
ferrite SMD bead
Figure
for list of components.
Table 10.
f
(GHz)
3.4
3.5
3.6
3.8
10.
C3
Measured test circuit impedances
C1
R2
All information provided in this document is subject to legal disclaimers.
BLF6G38-50
INPUT-REV 1A
30RF35
NXP
C2
Rev. 02 — 1 June 2010
C4
R1
BLF6G38-50; BLF6G38LS-50
Value
10 pF
0.7 pF
100 nF
10 μF; 50 V
470 μF; 63 V
9.1 Ω
-
Z
(Ω)
5.48 − j9.38
5.39 − j9.43
5.55 − j9.15
9.60 − j12.48
i
C6
C8
C5
[1]
[1]
[2]
[3]
C9
Remarks
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
C7
BLF6G38-50
OUTPUT-REV 1A
30RF35
NXP
WiMAX power LDMOS transistor
r
= 3.5 and thickness = 0.76 mm.
L1
Z
(Ω)
12.42 − j4.58
10.41 − j5.31
14.31 − j7.04
17.70 − j11.57
o
001aah404
C10
© NXP B.V. 2010. All rights reserved.
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