BLF6G38-50 NXP Semiconductors, BLF6G38-50 Datasheet - Page 10

• Manufacturer Part Number: BLF6G38-50
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-50

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 16.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 70W(Typ)
• Power Gain (typ)@vds: 14@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 5.6S
• Drain Source Resistance (max): 290@6.15Vmohm
• Reverse Capacitance (typ): 1.17@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 23%
• Mounting: Screw
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-50,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 12.
BLF6G38-50_BLF6G38LS-50
Product data sheet
Document ID
BLF6G38-50_BLF6G38LS-50 v.2
Modifications:
BLF6G38-50_BLF6G38LS-50_1
Revision history
Table 11.
Acronym
CCDF
CW
EVM
FCH
FFT
IBW
LDMOS
LDMOST
N-CDMA
PAR
PUSC
RF
SMD
VSWR
WCS
WiMAX
Release date Data sheet status
20100601
20080212
Abbreviations
•
•
Data sheet status changed from preliminary to product.
Section 12 “Legal information”
All information provided in this document is subject to legal disclaimers.
Description
Complementary Cumulative Distribution Function
Continuous Wave
Error Vector Magnitude
Frame Control Header
Fast Fourier Transform
Instantaneous BandWidth
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Narrowband Code Division Multiple Access
Peak-to-Average power Ratio
Partial Usage of SubChannels
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Wireless Communications Service
Worldwide Interoperability for Microwave Access
Rev. 02 — 1 June 2010
Product data sheet
Preliminary data
sheet
BLF6G38-50; BLF6G38LS-50
updated.
Change
notice
-
-
WiMAX power LDMOS transistor
BLF6G38-50_BLF6G38LS-50_1
Supersedes
-
© NXP B.V. 2010. All rights reserved.
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