BLF6G38-50 NXP Semiconductors, BLF6G38-50 Datasheet - Page 8

• Manufacturer Part Number: BLF6G38-50
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-50

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 16.5 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: SOT502B
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 70W(Typ)
• Power Gain (typ)@vds: 14@28VdB
• Frequency (min): 3.4GHz
• Frequency (max): 3.6GHz
• Package Type: LDMOST
• Pin Count: 3
• Forward Transconductance (typ): 5.6S
• Drain Source Resistance (max): 290@6.15Vmohm
• Reverse Capacitance (typ): 1.17@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 23%
• Mounting: Screw
• Mode Of Operation: 1-Carrier N-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-50,112

NXP Semiconductors
9. Package outline
Fig 11. Package outline SOT502A
BLF6G38-50_BLF6G38LS-50
Product data sheet
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT502A
0.186
0.135
4.72
3.43
H
A
U 2
A
A
12.83
12.57
0.505
0.495
b
0.006
0.003
0.15
0.08
c
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
0.374
0.366
9.50
9.30
All information provided in this document is subject to legal disclaimers.
JEDEC
E
U 1
D 1
D
q
b
0.375
0.364
9.53
9.25
REFERENCES
E 1
Rev. 02 — 1 June 2010
1
2
0.045
0.035
1.14
0.89
0
F
3
BLF6G38-50; BLF6G38LS-50
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
M
0.210
0.170
5.33
4.32
C
10 mm
L
M
C
0.133
0.123
3.38
3.12
p
L
p
B
F
0.067
0.057
1.70
1.45
Q
w 1
M
27.94
1.100
A
WiMAX power LDMOS transistor
q
M
B
PROJECTION
34.16
33.91
1.345
1.335
EUROPEAN
M
U 1
E 1
0.390
0.380
9.91
9.65
U 2
c
Q
0.25
0.01
w 1
© NXP B.V. 2010. All rights reserved.
ISSUE DATE
99-12-28
03-01-10
0.51
0.02
w 2
E
SOT502A
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