MUN5312DW1T2 ON Semiconductor, MUN5312DW1T2 Datasheet - Page 26

• Manufacturer Part Number: MUN5312DW1T2
• Description: Digital Transistors 100mA Complementary
• Manufacturer: ON Semiconductor

Specifications of MUN5312DW1T2

• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 22 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Package / Case: SC-88
• Collector- Emitter Voltage Vceo Max: 50 V
• Continuous Collector Current: 0.1 A
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 187 mW
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.001
3.5
2.5
1.5
0.5
0.01
3
2
1
0
0.1
0
1
0
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G NPN TRANSISTOR
5
I
C
/I
V
B
Figure 103. Output Capacitance
R
10
= 10
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
Figure 101. V
C
15
−25°C
, COLLECTOR CURRENT (mA)
75°C
20
20
25°C
25
100
0.1
10
CE(sat)
1
0
30
75°C
30
T
Figure 105. Input Voltage versus Output
versus I
A
35
= −25°C
10
I
f = 1 MHz
I
T
25°C
C
E
40
A
, COLLECTOR CURRENT (mA)
= 0 V
40
C
= 25°C
http://onsemi.com
45
20
50
Current
50
26
0.001
1000
0.01
100
30
100
0.1
10
10
1
1
0
1
75°C
V
Figure 104. Output Current versus Input
1
O
T
40
A
= 0.2 V
= −25°C
2
Figure 102. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
, INPUT VOLTAGE (VOLTS)
3
25°C
T
A
50
= −25°C
4
Voltage
75°C
5
10
6
25°C
7
V
O
V
8
CE
= 5 V
= 10 V
9
100
10